Sony developed the world's first "two -layer transistor painting body -laminated CMOS sensor technology".Contribution to wide dynamic range by expanding the photo diode part

Sony Semiconductor Solutions Co., Ltd. announced on December 16 that it has succeeded in developing the world's first two -layer transistor paint -laminated CMOS image sensor technology.It will contribute to the realization of "high -quality" in smartphone shooting.Announcement at IEDM (International Electronic Device Conference) held from December 11th.

A laminated photo diode and pixel transistor, which had previously formed on the same substrate, were formed into separate boards.It is said that the amount of saturation of about twice the amount of saturation compared to the conventional, and the image characteristics will be greatly improved by expanding the dynamic range and reducing noise.According to the company, the company adopts the technology, "In addition to the conventional pixels, it will enable maintenance and improvement of pixel characteristics in further fine pixels in the future."

The laminated CMOS image sensor is a sensor that adopts a structure with a laminated structure with a logic chip formed with a pixel tip formed and a signal processing circuit formed.The conventional sensor is located on this pixel chip, in parallel with a photodiode that converts light into an electric signal and a pixel transistor for controlling the signal.The challenge was to enlarge the photodiode part to increase the amount of saturation and increase the dynamic range.

In the two -layer transistor bodily laminated CMOS image sensor technology, each layer can be optimized by forming a photo diode and pixel transistor on another base.As a result, the amount of saturation, about twice the conventional, has been achieved, and the dynamic range has been expanded.It is said that shooting without white or black crushing will be possible even in scenes where the light and dark difference are large.

In addition, noise reduction is a reset transit transistor (RST), select transistor (SEL), amplifier transistor (AMP), etc. other than the transfer gate (TRG), and form a different layer with a photo diode.It is realized by enlarging.